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US 2025/0096170 A1Published application
Bonding structure, semiconductor device including the same and method of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorsByung Ho LEE, Jin Won PARK
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Abstract
A bonding structure may include a non-conductive layer and at least one conductive pad. The non-conductive layer may have a first surface and a second surface opposite to the first surface. The conductive pad may be arranged in the non-conductive pad. The conductive pad may include a vertical pattern portion and at least one volume compensation portion. The vertical pattern portion may extend from the first surface to the second surface in the non-conductive layer. The volume compensation portion may be formed on a sidewall of the vertical pattern portion.
Claims17
A bonding structure comprising:
- a non-conductive layer having a first surface and a second surface opposite to the first surface;
- and
- at least one conductive pad formed in the non-conductive layer,
- wherein the conductive pad comprises:
- a vertical pattern portion extending from the first surface to the second surface in the non-conductive layer;
- and
- at least one volume compensation portion formed on a sidewall of the vertical pattern portion.
4 more elements
A semiconductor device comprising:
- a first semiconductor component including a first device layer and a first bonding structure electrically connected with the first device layer;
- and
- a second semiconductor component including a second device layer and a second bonding structure electrically connected with the second device layer and hybrid-bonded to the first bonding structure,
- wherein each of the first bonding structure and the second bonding structure comprises at least one conductive pad exposed toward a bonding surface and a non-conductive layer formed outside the conductive pad, and
- wherein at least one of the conductive pads in the first and second bonding structures comprises a vertical pattern portion formed through the non-conductive layer and at least one volume compensation portion formed on a sidewall of the vertical pattern portion.
2 more elements
Dependencies are inferred from the claim text.