Semiconductor device

A semiconductor device thorough which a main current flows in a depth direction thereof, the semiconductor device comprising:

• a first metal electrode portion provided above an upper surface of a semiconductor substrate;
• a wire wiring portion connected to a connection region on an upper surface of the first metal electrode portion;
• and
• one or more dielectric films provided between the first metal electrode portion and the upper surface of the semiconductor substrate, wherein
• the first metal electrode portion includes:
• a first barrier metal layer provided on an upper surface of the one or more dielectric films and between side walls of the one or more dielectric films below the connection region and having a recessed structure that forms an interface along the side walls;
• a first tungsten portion formed of a material containing tungsten and provided on the first barrier metal layer below the connection region;
• and
• a gate pad provided on the first tungsten portion and having the connection region.

A semiconductor device thorough which a main current flows in a depth direction thereof, the semiconductor device comprising:

• a first metal electrode portion provided above an upper surface of a semiconductor substrate;
• a wire wiring portion connected to a connection region on an upper surface of the first metal electrode portion;
• a second metal electrode portion provided above the upper surface of the semiconductor substrate and separated from the first metal electrode portion;
• and
• one or more dielectric films provided (i) between the first metal electrode portion and the upper surface of the semiconductor substrate and (ii) between the second metal electrode portion and the upper surface of the semiconductor substrate, wherein
• the first metal electrode portion includes:
• a first barrier metal layer provided on an upper surface of the one or more dielectric films and between side walls of the one or more dielectric films below the connection region and having a recessed structure that forms an interface along the side walls;
• a first tungsten portion formed of a material containing tungsten and provided on the first barrier metal layer below the connection region;
• and
• a gate pad provided on the first tungsten portion and having the connection region, and
• the second metal electrode portion includes:
• a second barrier metal layer having an interface along a first contact hole provided in the one or more dielectric films;
• and
• a second tungsten portion formed of a material containing tungsten and provided on the second barrier metal layer, and
• a width between the side walls of the one or more dielectric films below the connection region is different from a width of the first contact hole.