Waveguide launcher in package based on high dielectric constant carrier

A semiconductor device comprising:

• a high-k dielectric carrier substrate having first and second carrier surfaces, the high-k dielectric carrier substrate comprising a glass layer surrounding a ceramic layer that defines a waveguide region and that extends partially into a die region formed in the glass layer;
• a first array of conductors formed on the first carrier surface to define a plurality of integrated circuit connection lines positioned in the die region, a separate waveguide ring positioned to substantially surround the waveguide region, and a separate excitation element positioned to extend from the die region to a first interior side of the waveguide region to be substantially surrounded by the separate waveguide ring;
• a semiconductor die attached to the plurality of integrated circuit connection lines and the separate excitation element on the first carrier surface of the high-k dielectric carrier substrate;
• a first air cavity formed to extend partially into the ceramic layer from the first carrier surface and positioned on a second exterior side of the waveguide region to be substantially surrounded by the separate waveguide ring;
• a cavity cap sheet formed on the first carrier surface to cover the first air cavity;
• and
• a molding compound that encapsulates the semiconductor die and cavity cap sheet on the first carrier surface without filling the first air cavity.

A semiconductor device comprising:

• a glass carrier substrate formed from a high-k dielectric material;
• a ceramic region formed in the glass carrier substrate which includes a defined waveguide area and which extends to a defined die attach area;
• a plurality of conductive patterns formed on a first surface of the glass carrier substrate including:
• a differential waveguide launcher disposed over the ceramic region and formed with a radiating element connected to a pair of signal lines extending from the defined waveguide area to the defined die attach area,
• a patterned array of one or more conductors disposed over the ceramic region in a waveguide conductor ring positioned in the defined waveguide area to surround the radiating element on at least three sides;
• an air cavity formed in the ceramic region, the air cavity positioned in the defined waveguide area and adjacent to the radiating element and surrounded on at least three sides by the patterned array of one or more conductors;
• a semiconductor die attached to the glass carrier substrate at the defined die attach area and electrically connected to the differential waveguide launcher;
• a molding compound covering the semiconductor die and the plurality of conductive patterns, the molding compound having a first side attached to the glass carrier substrate and a second side opposite the first side;
• and
• a first array of conductors formed in the molding compound that are aligned for connection with the plurality of conductive patterns, the first array of conductors extending from the molding compound first side to the molding compound second side, the first array of conductors arranged in the molding compound configured as a first waveguide interface perimeter surrounding a first waveguide interface interior.

A semiconductor device comprising:

• a high-k dielectric carrier substrate having first and second carrier substrate surfaces, the high-k dielectric carrier substrate including a glass layer surrounding a ceramic layer that defines and surrounds a millimeter waveguide region;
• a first array of conductors formed on the first carrier substrate surface to define a plurality of integrated circuit connection lines positioned in a die region, a separate waveguide ring positioned to substantially surround the millimeter waveguide region, and a separate excitation element positioned to extend from the die region to the millimeter waveguide region with a peripheral end of the separate excitation element substantially surrounded by the separate waveguide ring;
• a first air cavity formed in the ceramic layer and positioned adjacent to the peripheral end of the separate excitation element in the millimeter waveguide region and substantially surrounded by the separate waveguide ring;
• a semiconductor die including an integrated circuit attached to the plurality of integrated circuit connection lines and the separate excitation element on the first carrier surface of the high-k dielectric carrier substrate;
• a laminate cap sheet attached on the first carrier substrate surface to cover the first air cavity;
• and
• a molding compound layer encapsulating the semiconductor die, first array of conductors, and laminate cap sheet, the molding compound layer having a first side attached to the first carrier substrate surface and a second side opposite the first side.