Methods and structures for increasing capacitance density in integrated passive devices

A method comprising:

• forming a first trench capacitor within a first insulating layer overlying a substrate;
• forming a second trench capacitor within a second insulating layer overlying the first insulating layer;
• and
• connecting the first and second trench capacitors through connection vias that extend through the second insulating layer to form an integrated passive device (IPD) capacitor.

A method comprising:

• forming a first insulating layer over a substrate;
• forming a first trench within the first insulating layer;
• forming a first trench capacitor within the first trench, the first trench capacitor comprising a primary electrode, a dielectric layer overlying the primary electrode, and a secondary electrode overlying the dielectric layer;
• forming a second insulating layer over the first trench capacitor and over the first insulating layer;
• forming a second trench within the second insulating layer;
• forming a second trench capacitor within the second trench, the second trench capacitor comprising a primary electrode, a dielectric layer overlying the primary electrode, and a secondary electrode overlying the dielectric layer;
• forming vias that extend entirely through the second insulating layer;
• forming a conductive layer within primary vias to electrically connect the primary electrode of the first trench capacitor with the primary electrode of the second trench capacitor;
• forming a conductive layer within secondary vias to electrically connect the secondary electrode of the first trench capacitor with the secondary electrode of the second trench capacitor;
• and
• forming a dielectric layer within tertiary vias to connect the dielectric layer of the first trench capacitor with the dielectric layer of the second trench capacitor to form an integrated passive device capacitor.