Thermal performance improvement and stress reduction in semiconductor device modules

A method for producing a semiconductor device module, the method comprising:

• coupling a first side of a first semiconductor die with a first metal layer of a substrate;
• coupling a first side of a second semiconductor die with the first metal layer;
• producing a signal distribution assembly, the producing including:
• forming a second metal layer, such that the second metal layer has:
• a first side, the first side being planar;
• and
• a second side opposite the first side, the second side being non-planar and including:
• a first base portion;
• a first post extending from the first base portion;
• and
• a second post extending from the first base portion;
• and
• molding the second metal layer with a molding compound such that the molding compound is disposed on the second side of the second metal layer with respective upper surfaces of the first post and the second post being exposed through the molding compound;
• coupling the signal distribution assembly with the first semiconductor die and the second semiconductor die such that:
• the respective upper surface of the first post is coupled with a second side of the first semiconductor die opposite the first side of the first semiconductor die;
• and
• the respective upper surface of the second post is coupled with a second side of the second semiconductor die opposite the first side of the second semiconductor die, the signal distribution assembly electrically coupling the first semiconductor die with the second semiconductor die.