Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a support structure including a first inclined surface;
• a gate structure including insulating layers and conductive layers alternately stacked on the support structure, each of the conductive layers including a second inclined surface;
• a channel structure extending through the second inclined surface of the gate structure;
• and
• a slit structure extending in a direction crossing the second inclined surface in the gate structure.

A semiconductor device comprising:

• a source structure;
• a support structure disposed over the source structure, the support structure including a plurality of supports arranged along a first direction;
• a gate structure disposed over the support structure, the gate structure including conductive layers and insulating layers alternately stacked;
• and
• channel structures passing through the gate structure to connect to the source structure,
• wherein the support structure has an overall wave-like profile with a plurality of alternating convex protrusions and concave valleys;
• and
• wherein each of the conductive layers includes a wave-like profile extending in the second direction.