US 2025/0096138 A1 · INTEGRATED CIRCUIT INCLUDING COMPLEMENTARY FIELD EFFECT TRANSISTOR

Abstract

Provided is an integrated circuit including a complementary field effect transistor including a first transistor and a second transistor arranged in a vertical direction on a front side of a substrate, a via structure extending in the vertical direction on the second transistor and interconnecting a source/drain of the second transistor to a source/drain of the first transistor, at least one frontside power rail disposed above the first transistor in the vertical direction and transmitting a first supply voltage to the first transistor, a backside via penetrating through the substrate in the vertical direction, and at least one backside power rail disposed on a back side of the substrate and transmitting a second supply voltage to the second transistor through the backside via, wherein the first supply voltage and the second supply voltage have different voltage levels, and the first transistor and the second transistor share a gate line.

Claims20

Dependent claims

An integrated circuit comprising:

a complementary field effect transistor comprising a first transistor and a second transistor arranged in a vertical direction on a front side of a substrate;
a via structure extending in the vertical direction on the second transistor and connecting the second transistor to the first transistor;
at least one frontside power rail above the first transistor in the vertical direction and configured to transmit a first supply voltage to the first transistor;
a backside via penetrating through the substrate in the vertical direction;
and
at least one backside power rail on a back side of the substrate and configured to transmit a second supply voltage to the second transistor through the backside via,
wherein the first supply voltage and the second supply voltage are different, and
wherein the first transistor and the second transistor share a gate line.

5 more elements

An integrated circuit comprising:

a first active region and a second active region arranged, in a vertical direction with respect to a substrate, on a front side of the substrate;
a gate line extending in the vertical direction and connected to the first active region and the second active region;
a via structure extending in the vertical direction on the second active region and connecting the first active region to the second active region;
a frontside power rail above the first active region in the vertical direction and configured to transmit a first supply voltage to the first active region;
a backside power rail on a back side of the substrate and configured to transmit a second supply voltage to a source/drain region of the second active region;
and
a direct backside contact extending in the vertical direction on the backside power rail and connecting the backside power rail to the source/drain region of the second active region,
wherein the first supply voltage and the second supply voltage are different.

5 more elements

An integrated circuit comprising:

a plurality of first active regions on a front side of a substrate, wherein each first active region of the plurality of first active regions extends in a first direction, is spaced apart from other first active regions of the plurality of first active regions in a second direction intersecting with the first direction, and has a first height in the second direction;
a second active region overlapping the plurality of first active regions in a vertical direction with respect to the substrate and having a second height greater than the first height in the second direction;
a gate line extending in the vertical direction and connected to the plurality of first active regions and the second active region;
a plurality of via structures each extending in the vertical direction on the first active regions and connecting the plurality of first active regions to the second active region;
at least one frontside power rail above the plurality of first active regions and the second active region in the vertical direction and configured to receive a first supply voltage;
and
at least one backside power rail on a back side of the substrate and configured to receive a second supply voltage,
wherein the first supply voltage and the second supply voltage are different.

5 more elements

Dependencies are inferred from the claim text.

Integrated circuit including complementary field effect transistor

Life of this patent

Integrated circuit including complementary field effect transistor

Life of this patent

Abstract

Claims20