Semiconductor device

A semiconductor device comprising:

• a substrate;
• a source electrode that extends in a first direction and is provided on the substrate;
• a drain electrode that extends in the first direction and is provided on the substrate;
• a first gate electrode that extends in the first direction and is provided on the substrate between the source electrode and the drain electrode;
• a second gate electrode that extends in the first direction and is provided on the substrate in the first direction of the first gate electrode between the source electrode and the drain electrode;
• a gate pad that is provided so as to interpose the first gate electrode between the second gate electrode and the gate pad, and electrically connected to the first gate electrode;
• a gate wiring that is provided above the source electrode on a side opposite to the substrate, extends in the first direction, and electrically connects the gate pad and the second gate electrode;
• and
• a guard metal layer that is provided between the gate wiring and the drain electrode, extends in the first direction, at least a part of the guard metal layer being provided above the source electrode and electrically connected to the source electrode.