Integrated circuit device

An integrated circuit device comprising:

• a fin-type active region extending in a first horizontal direction on a substrate;
• a channel region on the fin-type active region;
• a gate line on the fin-type active region, the gate line surrounding the channel region and the gate line extending in a second horizontal direction that crosses the first horizontal direction;
• and
• a source/drain region on the fin-type active region, the source/drain region being adjacent to the gate line and the source/drain region being in contact with the channel region,
• wherein the gate line includes a main gate portion and a plurality of sub gate portions between the main gate portion and the fin-type active region, the main gate portion being at a higher vertical level than the channel region,
• the plurality of sub gate portions include a first sub gate portion on a fin top of the fin-type active region, a second sub gate portion on the first sub gate portion, and a third sub gate portion on the second sub gate portion,
• a width of the first sub gate portion in the first horizontal direction is less than a width of the second sub gate portion in the first horizontal direction,
• the first sub gate portion includes a first side surface and a second side surface overlapping the first side surface in the first horizontal direction, and
• the first side surface of the first sub gate portion is indented toward the second side surface of the first sub gate portion.

An integrated circuit device comprising:

• a fin-type active region extending in a first horizontal direction on a substrate;
• a nanosheet stack including a plurality of nanosheets facing a fin top of the fin-type active region, the nanosheet stack is separated from the fin top of the fin-type active region;
• a gate line on the fin-type active region, the gate line surrounding each of the plurality of nanosheets and the gate line extending in a second horizontal direction that crosses the first horizontal direction;
• and
• a source/drain region on the fin-type active region, the source/drain region being adjacent to the gate line and the source/drain region being in contact with the plurality of nanosheets,
• wherein the gate line includes a main gate portion on a top surface of the nanosheet stack and the gate line includes a plurality of sub gate portions respectively below the plurality of nanosheets,
• the plurality of sub gate portions include a first sub gate portion, a second sub gate portion, a third sub gate portion, and a fourth sub gate portion that are sequentially arranged on the fin top of the fin-type active region,
• a width of the second sub gate portion in the first horizontal direction is greater than a width of the first sub gate portion in the first horizontal direction and the width of the second sub gate portion is less than a width of the third sub gate portion in the first horizontal direction,
• a width of the fourth sub gate portion in the first horizontal direction is less than the width of the third sub gate portion in the first horizontal direction,
• the plurality of nanosheets include a first nanosheet between the first sub gate portion and the second sub gate portion, a second nanosheet between the second sub gate portion and the third sub gate portion, a third nanosheet between the third sub gate portion and the fourth sub gate portion, and a fourth nanosheet between the fourth sub gate portion and the main gate portion, and
• a width of the fourth nanosheet in the first horizontal direction is greater than a width of the third nanosheet in the first horizontal direction.