Semiconductor device, resistive device, and method of obtaining electrical characteristics of semiconductor device

A semiconductor device, comprising:

• a first resistor comprising:
• a first conductive structure having a first side and a second side opposite to the first side;
• and
• a first array of vias disposed closer to the first side than the second side;
• and
• a second resistor comprising:
• a second conductive structure having a third side and a fourth side opposite to the third side;
• and
• a second array of vias disposed closer to the third side than the fourth side,
• wherein the first conductive structure of the first resistor comprises a first conductive layer and the second conductive structure of the second resistor comprises a second conductive layer having a dimension different from that of the first conductive layer.

A method of obtaining electrical characteristics of a semiconductor device, comprising:

• measuring, by a measurement tool, a first property of a first component of the semiconductor device comprising a number of first conductive vias and a first conductive layer;
• measuring, by the measurement tool, a second property of a second component of the semiconductor device comprising a number of second conductive vias and a second conductive layer;
• and
• calculating, by the measurement tool, a third property of the first conductive vias based on a first linear relationship associated with the first property and the second property,
• wherein a dimension of the second conductive layer is different from that of the first conductive layer and a dimension of the first conductive vias is substantially identical to that of the second conductive vias.