US 2025/0096117 A1 · INTEGRATED CIRCUITS INCLUDING STACKED THIN FILM INDUCTORS AND METHODS OF FABRICATION

Abstract

Passive components located outside the IC increase the area of the package and are connected to the circuits inside the IC by long electrical paths that may have high resistance as well as parasitic inductance and capacitance. An IC includes interconnect layers on a surface of a substrate comprising circuits, and the interconnect layers include stacked thin-film inductors formed in interconnect layers to provide noise protection for input signals provided to circuits in the IC while reducing an area of an IC package. The stacked thin-film inductors include a first thin-film inductor stacked between a second thin-film inductor and the surface of the substrate in a direction orthogonal to the surface of the substrate. The thin-film inductors can be formed of layers of magnetic material around a linear interconnect. The interconnect layers may be formed in a back end of line process on one surface of a substrate.

Claims20

Dependent claims

An integrated circuit (IC) comprising:

a substrate comprising a surface and a circuit coupled to a first pad contact on the surface;
a first interconnect layer disposed on the surface of the substrate and comprising a first thin-film inductor comprising a first linear interconnect of a first length extending in a first direction;
and
a second interconnect layer disposed on the first interconnect layer and comprising a second thin-film inductor comprising a second linear interconnect of a second length extending in the first direction;
wherein the first linear interconnect having the first length is between the second linear interconnect having the second length and the surface of the substrate in a second direction orthogonal to the surface of the substrate.

2 more elements

A method of fabricating an integrated circuit (IC), the method comprising:

forming a substrate comprising a surface and a circuit coupled to a first pad contact on the surface;
forming a first interconnect layer on the surface of the substrate and comprising a first thin-film inductor comprising a first linear interconnect of a first length extending in a first direction;
and
forming a second interconnect layer disposed on the first interconnect layer and comprising a second thin-film inductor comprising a second linear interconnect of a second length extending in the first direction;
wherein the first linear interconnect having the first length is between the second linear interconnect having the second length and the surface of the substrate in a second direction orthogonal to the surface of the substrate.

2 more elements

Dependencies are inferred from the claim text.

Integrated circuits including stacked thin film inductors and methods of fabrication

Life of this patent

Integrated circuits including stacked thin film inductors and methods of fabrication

Life of this patent

Abstract

Claims20