Semiconductor memory device

A semiconductor memory device, comprising:

• a first conductor layer provided via a first insulator layer above a substrate;
• a stacked structure in which a plurality of second conductor layers are stacked above the first conductor layer and spaced apart from each other in a first direction;
• a pillar passing through the second conductor layers along the first direction, and including a first semiconductor layer electrically coupled to the first conductor layer and a second insulator layer provided between the first semiconductor layer and the second conductor layers of the stacked structure, intersections of the pillar with the second conductor layers functioning as memory cell transistors;
• a plurality of insulating members provided in a plurality of slits each extending in a second direction intersecting the first direction in the second conductor layers of the stacked structure and dividing the stacked structure into a plurality of regions in a third direction intersecting the first direction and the second direction;
• a plurality of conductive members passing through the second conductor layers along the first direction in which top surfaces thereof differing in height from a top surface of the pillar, each of the conductive members including a third conductor layer partially in contact with the first conductor layer and a third insulator layer provided between the third conductor layer and the second conductor layers of the stacked structure;
• and
• an upper contact provided on the third conductor layer of a first one of the conductive members,
• wherein no upper contact is provided on the third conductor layer of a second one of the conductive members, the first one and the second one of the conductive members both passing through the stacked structure within a first region among the regions positioned between two insulating members adjacent in the third direction among the insulating members,
• a portion of the stacked structure within the first region is provided between the first one and the second one of the conductive members, and
• a position of the first one of the conductive members is closer to a central position between the two insulating members than a position of the second one of the conductive members along the third direction within the first region.