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US 2025/0096112 A1Published application
Semiconductor device
AssigneeNanya Technology Corporation
InventorFang-Wen LIU
Life of this patent
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a wafer, powering redistribution layers, and grounding redistribution layers. The powering redistribution layers are disposed on the wafer. The grounding redistribution layers are disposed on the wafer, in which each of the powering redistribution layers and a corresponding one of the grounding redistributions layers form a capacitor.
Claims20
A semiconductor device, comprising:
- a wafer;
- a plurality of powering redistribution layers disposed on the wafer;
- and
- a plurality of grounding redistribution layers disposed on the wafer,
- wherein each of the powering redistribution layers and a corresponding one of the grounding redistribution layers form a capacitor, and the powering redistribution layers and the grounding redistribution layers are concentrically disposed,
- wherein one of the powering redistribution layers is separated from one of the grounding redistribution layers.
3 more elements
A semiconductor device, comprising:
- a wafer;
- a plurality of powering redistribution layers disposed on the wafer;
- and
- a plurality of grounding redistribution layers disposed on the wafer,
- wherein each of the powering redistribution layers and a corresponding one of the grounding redistribution layers form a capacitor, and the powering redistribution layers and the grounding redistribution layers are concentrically disposed,
- wherein one of the powering redistribution layers or one of the grounding redistribution layers has a shape of circle.
3 more elements
Dependencies are inferred from the claim text.