Semiconductor device

A semiconductor device, comprising:

• a base substrate;
• and
• a semiconductor chip disposed on the base substrate,
• wherein the base substrate includes:
• a core substrate;
• a plurality of first interconnection substrates disposed on a first surface of the core substrate and a second surface of the core substrate opposite to the first surface;
• a first via hole penetrating the core substrate;
• a second via hole penetrating the core substrate and the first interconnection substrates,
• wherein the second via hole has a same central axis as the first via hole, and has a width narrower than a width of the first via hole;
• a first conductive plug disposed on an internal wall of the first via hole;
• and
• a second conductive plug disposed in at least a portion of the second via hole.

A semiconductor device, comprising:

• a base substrate including a core substrate, a plurality of first interconnection substrates disposed on each of a first surface of the core substrate and a second surface of the core substrate opposite to the first surface and including a plurality of first interconnection layers, a plurality of second interconnection substrates disposed on the first interconnection substrates and including a plurality of second interconnection layers, and a plurality of first through-via structures penetrating at least a portion of the core substrate, the first interconnection substrates, and the second interconnection substrates;
• and
• a semiconductor chip disposed on the base substrate and electrically connected to at least a portion of the first and second interconnection layers,
• wherein at least a portion of the plurality of first through-via structures includes:
• a first through-electrode penetrating the core substrate and in contact with the first interconnection layers;
• a second through-electrode penetrating the core substrate and the first interconnection substrates,
• wherein the second through-electrode has a same central axis as the first through-electrode and has a width narrower than a width of the first through-electrode, and is in contact with the second interconnection layers;
• and
• a first insulating layer disposed between the first through-electrode and the second through-electrode and substantially on a same level as the first interconnection layers.