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US 2025/0096059 A1Published application
Integrated Fan Out Device with a Filler-Free Insulating Material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Chih Chen, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
Life of this patent
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Abstract
A redistribution structure is made using filler-free insulating materials with high shrinkage rate. As a result, good planarity may be achieved without the need to perform a planarization of each insulating layer of the redistribution structure, thereby simplifying the formation of the redistribution structure.
Claims20
A method comprising:
- forming a redistribution structure over a conductive feature of a substrate, the redistribution structure comprising:
- a first conductive layer,
- a first insulating layer over the first conductive layer, the first insulating layer comprising a first filler-free insulating material,
- a second conductive layer over the first insulating layer, the second conductive layer coupled to the first conducting layer, and
- a second insulating layer over the second conductive layer, the second insulating layer comprising a second filler-free insulating material, wherein an upper surface of the second insulating layer is wavy, wherein a first difference between an average peak of the upper surface of the second insulating layer and an average valley of the upper surface of the second insulating layer is between 3 μm and 5 μm;
- and
- forming a conductive connector electrically coupled to the redistribution structure.
4 more elements
A method comprising:
- forming a redistribution structure over a first conductive feature, forming the redistribution structure comprising:
- depositing a first insulating layer over the first conductive feature, the first insulating layer comprising a first filler-free insulating material,
- shrinking the first insulating layer, wherein after shrinking the first insulating layer has a first thickness adjacent the first conductive feature,
- forming an opening in the first insulating layer to expose a portion of the first conductive feature,
- forming a second conductive feature in the opening, the second conductive feature coupled to the first conductive feature through the opening,
- depositing a second insulating layer over the second conductive feature, the second insulating layer comprising a second filler-free insulating material, and
- shrinking the second insulating layer, wherein after shrinking the second insulating layer has a second thickness adjacent the second conductive feature, wherein the second thickness is less than the first thickness;
- and
- forming a conductive connector over the redistribution structure, the conductive connector electrically coupled to the redistribution structure.
6 more elements
A method comprising:
- forming a redistribution structure over a first conductive feature, forming the redistribution structure comprising:
- depositing a first insulating layer over the first conductive feature, the first insulating layer comprising a first filler-free insulating material,
- curing the first insulating layer, wherein the first insulating layer has a first shrinkage rate during curing,
- forming an opening in the first insulating layer to expose a portion of the first conductive feature,
- forming a second conductive feature in the opening, the second conductive feature coupled to the first conductive feature through the opening,
- depositing a second insulating layer over the second conductive feature, the second insulating layer comprising a second filler-free insulating material, and
- curing the second insulating layer, wherein the second insulating layer has a second shrinkage rate during curing, wherein the first shrinkage rate is greater than the second shrinkage rate, wherein after curing the second insulating layer a thickness of the first insulating layer is greater than a thickness of the second insulating layer;
- and
- forming a conductive connector over the redistribution structure, the conductive connector electrically coupled to the redistribution structure.
6 more elements
Dependencies are inferred from the claim text.