Stair-step configuration for a semiconductor die of an integrated circuit

A method, comprising:

• obtaining a wafer including a first semiconductor die and a second semiconductor die on a wafer;
• forming a first cut in the wafer between the first semiconductor die and the second semiconductor die, wherein the first cut is formed by a first cutting device having a first width and wherein the first cut partially extends through the wafer;
• and
• forming a second cut in the wafer between the first semiconductor die and the second semiconductor die, wherein the second cut is formed by a second cutting device having a second width that is narrower than the first width and wherein the first cut and the second cut form a stairstep configuration between the first semiconductor die and the second semiconductor die.

An integrated circuit, comprising:

• a semiconductor die having:
• a first surface;
• a second surface opposite the first surface;
• and
• a third surface disposed between the first surface and the second surface, wherein the third surface is formed from a first cutting means having a first width and a second cutting means having a second width, wherein the first cutting means forms a first cut partially though a wafer associated with the semiconductor die and wherein the second cutting means forms a second cut within the first cut such that the semiconductor die has a stairstep configuration.