Localized thermal healing and doping of glass cores for microelectronic assemblies

Abstract

Microelectronic assemblies with glass cores that have undergone localized thermal healing and/or localized doping in regions adjacent to glass surface are disclosed. In one example, a microelectronic assembly includes a glass core having a first face, an opposing second face, a sidewall extending between the first face and the second face, a surface region, and a bulk region, where the surface region is a portion of the glass core that starts at a surface of the first face, the second face, or the sidewall and extends from the surface into the glass core by a total depth of up to about 50 micron, the bulk region is a portion of the glass core further away from the surface than the surface region, and a density of the surface region is higher than a density of the bulk region, e.g., at least about 5% higher or at least about 7.5% higher.

Dependencies are inferred from the claim text.