Structure for testing interfacial adhesion between mold compound and vertical edges of a semiconductor die

An integrated assembly, comprising:

• a semiconductor die;
• and
• an interfacial adhesion testing structure extending laterally beyond a vertical edge of the semiconductor die,
• wherein a thickness of the interfacial adhesion testing structure and a thickness of the semiconductor die are a same approximate thickness.

A method, comprising:

• monitoring a mechanical loading condition applied to an integrated assembly that includes a semiconductor die and an interfacial adhesion testing structure that extends laterally beyond a vertical edge of the semiconductor die,
• wherein the interfacial adhesion testing structure includes a same material as a casing structure surrounding the semiconductor die;
• determining a magnitude of the mechanical loading condition at which an interfacial adhesion failure occurs within an interface region between the interfacial adhesion testing structure and the vertical edge of the semiconductor die;
• and
• determining one or more properties related to an interfacial strength within the interface region based on the magnitude of the mechanical loading condition.

A method, comprising:

• forming a stack of one or more semiconductor dies on a substrate;
• forming a reinforcement structure on the substrate adjacent to the stack of one or more semiconductor dies;
• forming a casing over the stack of one or more semiconductor dies and over the reinforcement structure;
• removing a portion of the substrate that is below the reinforcement structure;
• and
• removing a portion of the casing that is above the reinforcement structure,
• wherein removing the portion of the casing in combination with removing the portion of the substrate forms an interfacial adhesion testing structure that is reinforced and that extends laterally beyond vertical edges of the one or more semiconductor dies.