Substrate processing monitoring

A processing chamber comprising:

• a chamber hardware component disposed within a processing volume of the processing chamber;
• a first sensing device configured to receive radiation signals from a first film disposed on a surface of the chamber hardware component;
• and
• a controller configured to:
• cause the processing chamber to perform a processing operation simultaneously on the first film and on a second film disposed on a substrate in the processing volume;
• determine a thickness of the first film during the processing operation;
• adjust a processing parameter based on the thickness of the first film;
• and
• cause the processing chamber to continue the processing operation simultaneously on the first and second films after adjusting the processing parameter.

A method for processing substrates within a processing chamber, the method comprising:

• receiving a first radiation signal with a sensing device while processing a first substrate disposed within the processing chamber, the first radiation signal corresponding to a first film on a surface of a chamber hardware component disposed within the processing chamber;
• receiving a second radiation signal with the sensing device while processing a second substrate disposed within the processing chamber, the second radiation signal corresponding to a second film on the surface of the chamber hardware component disposed within the processing chamber;
• performing a comparison of the second radiation signal against the first radiation signal while processing the second substrate;
• adjusting a processing parameter based on the comparison;
• and
• continue processing the second substrate after adjusting the processing parameter.