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US 2025/0096040 A1Published application
Semiconductor device including a contact
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYu-Lien HUANG
Life of this patent
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Abstract
A device which includes a conductive element at least partially in a substrate; a dielectric material over the conductive element; a contact electrically connecting to the conductive element; and a dielectric liner between the contact and the dielectric material, wherein the dielectric liner has a liner thickness of not less than 0.5 nanometers (nm) and not greater than 10 nm.
Claims20
A device comprising:
- a conductive element at least partially in a substrate;
- a dielectric material over the conductive element;
- a contact electrically connecting to the conductive element;
- and
- a dielectric liner between the contact and the dielectric material, wherein the dielectric liner has a liner thickness of not less than 0.5 nanometers (nm) and not greater than 10 nm.
2 more elements
A device comprising:
- a conductive element;
- a dielectric layer over the conductive element, wherein the dielectric layer defines an opening at least partially exposing the conductive element;
- a dimension offset liner material (DOLM) in the opening, wherein the DOLM has a variable thickness in a direction parallel to a top surface of the dielectric layer;
- and
- a contact in the opening, wherein the DOLM is between the dielectric layer and the contact.
2 more elements
A device comprising:
- a first conductive element;
- a second conductive element;
- a dielectric layer over the first conductive element and the second conductive element, wherein the dielectric layer defines a first opening at least partially exposing the first conductive element, and the dielectric layer defines a second opening at least partially exposing the second conductive element;
- a dimension offset liner material (DOLM) in the first opening, wherein the DOLM has a variable thickness in a direction parallel to a top surface of the dielectric layer;
- a first contact in the first opening, wherein the DOLM is between the dielectric layer and the first contact;
- and
- a second contact in the second opening, wherein the second contact is electrically connected to the second conductive element.
4 more elements
Dependencies are inferred from the claim text.