Semiconductor device and method for manufacturing the same

A method, comprising:

• depositing a dielectric film over a semiconductor device;
• depositing a first dielectric material over the dielectric film;
• forming a first contact through the dielectric film and the first dielectric material, wherein the first contact is adjacent to a source of the semiconductor device;
• forming a second contact through the dielectric film and the first dielectric material, wherein the second contact is adjacent to a drain of the semiconductor device;
• etching a trench through the dielectric film and the first dielectric material, wherein the trench is adjacent to a gate of the semiconductor device;
• and
• depositing a second dielectric material in the trench.

A method, comprising:

• depositing a dielectric film over a semiconductor device;
• depositing a first dielectric material and a first portion of a second dielectric material over the dielectric film;
• etching a trench through the dielectric film, the first dielectric material, and the first portion of the second dielectric material, wherein the trench is over a gate of the semiconductor device;
• and
• depositing a second portion of the second dielectric material in the trench.