Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• a first process performed on a semiconductor member including a first face, the semiconductor member including a crystal, the first process including at least one of implanting a first element into a first portion of the semiconductor member from the first face or irradiating the first portion with a particle beam;
• a second process to implant a second element into a first region of the semiconductor member and not to implant the second element into a second region of the semiconductor member, the first region and the second region being located between the first face and the first portion, a direction from the first region to the second region being along the first face;
• and
• a third process to irradiate the semiconductor member with a first electromagnetic wave from the first face through the first region and the second region after the second process, the first electromagnetic wave having a first peak wavelength.