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US 2025/0095991 A1Published application
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKoki MUKAIYAMA, Takayuki KATSUNUMA
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Abstract
Provided is a technique for improving a mask selectivity in etching. An etching method according to the present disclosure includes step (a) preparing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern, step (b) forming a metal-containing film on the mask, and step (c) etching the silicon-containing film by generating the plasma from a first processing gas containing a hydrogen fluoride gas.
Claims26
An etching method comprising:
- step (a) providing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern;
- step (b) forming a metal-containing film on the mask;
- and
- step (c) etching the silicon-containing film by generating plasma from a first processing gas containing a hydrogen fluoride gas.
1 more element
An etching method comprising:
- step (a) preparing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern;
- step (b) forming a metal-containing film on the mask;
- and
- step (c) etching the silicon-containing film by generating plasma from a first processing gas.
1 more element
A plasma processing apparatus comprising:
- a power source;
- a chamber including an electrostatic chuck;
- a temperature controller;
- a gas introducer including a shower head;
- and
- circuitry configured to:
- control at least the temperature controller to prepare a substrate including a silicon-containing film and a mask on the silicon-containing film in the chamber, the mask including an opening pattern,
- control at least the gas introducer to form a metal-containing film on the mask, and
- control at least the power source, the gas introducer and the electrostatic chuck to etch the silicon-containing film by generating plasma from a first processing gas containing a hydrogen fluoride gas.
6 more elements
Dependencies are inferred from the claim text.