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US 2025/0095982 A1Published application
Inherent area selective deposition of silicon-containing dielectric on metal substrate
AssigneeGelest, Inc.
InventorsChad Michael BRICK, Tomoyuki Ogata
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Abstract
An inherently selective process for the deposition of silicon-containing dielectric layers on metal layers includes atomic layer deposition or chemical vapor deposition utilizing a chemical precursor comprising silicon and sulfur, and an oxidant. An optional buffer layer may be present between the metal layer and the selectively deposited film.
Claims37
A method for selectively depositing a silicon-containing dielectric layer upon a patterned substrate, the method comprising:
- (a) introducing a patterned substrate into a reaction zone of a deposition chamber, the patterned substrate comprising at least one metallic region and at least one isolated non-metallic region, wherein a temperature of the reaction zone is between about 25° C. and about 500° C.;
- and
- (b) forming a silicon-containing dielectric layer overlaying only the at least one metallic region of the patterned substrate via an atomic layer deposition process or a chemical vapor deposition process, wherein the patterned substrate is exposed to a compound comprising silicon and sulfur, and wherein the patterned substrate is exposed to an oxidant.
A method for selectively depositing a silicon-containing dielectric layer upon a substrate, the method comprising:
- (a) introducing a patterned substrate into a reaction zone of a deposition chamber, the patterned substrate having a first layer and a second layer, the first layer comprising at least one metallic region and at least one isolated non-metallic region, and the second layer comprising a buffer material, wherein a temperature of the reaction zone is between about 25° C. and about 500° C.;
- and
- (b) forming a silicon-dielectric layer upon the second layer of the patterned substrate and overlaying only the at least one metallic region of the first layer via an atomic layer deposition process or a chemical vapor deposition process, wherein the patterned substrate is exposed to a compound comprising silicon and sulfur, and wherein the patterned substrate is exposed to an oxidant.
Dependencies are inferred from the claim text.