Substrate processing device and substrate processing method

A substrate processing method comprising:

• collecting a plurality of pieces of optical emission spectrometry data including a wavelength, intensity of the wavelength, and time using optical emission spectrometry on a plurality of substrates;
• selecting a selected wavelength band having a high correlation with an endpoint of an etching process from the plurality of pieces of optical emission spectrometry data;
• preprocessing the plurality of pieces of optical emission spectrometry data to generate a selected dataset;
• generating a principal component analysis model using the selected dataset;
• generating a Gaussian mixture model capable of clustering data of the principal component analysis model;
• and
• performing the etching process on a process substrate using the principal component analysis model and the Gaussian mixture model,
• wherein the performing of the etching process on the process substrate includes
• collecting process optical emission spectrometry data of the process substrate and preprocessing the process optical emission spectrometry data,
• generating a dimensionally reduced matrix by applying preprocessed process optical emission spectrometry data of the process substrate to the principal component analysis model,
• applying the dimensionally reduced matrix to the Gaussian mixture model and generating labeled data and classifying the labeled data by process time, and
• determining an endpoint of the process substrate based on deviations of the labeled data over time.

A substrate processing device comprising:

• a chamber;
• a plasma source configured to generate plasma for processing a process substrate within the chamber;
• an optical emission spectrometry configured to measure optical emission spectrometry data within the chamber;
• and
• a controller configured to analyze the optical emission spectrometry data measured through the optical emission spectrometry,
• wherein the controller performs an etching process on the process substrate using a preset principal component analysis model and a preset Gaussian mixture model, and
• wherein the etching process of the process substrate includes
• collecting process optical emission spectrometry data of the process substrate and preprocessing the process optical emission spectrometry data,
• generating a dimensionally reduced matrix by applying preprocessed process optical emission spectrometry data of the process substrate to a principal component analysis model,
• applying the dimensionally reduced matrix to a Gaussian mixture model and generating labeled data and classifying the labeled data by process time, and
• determining an endpoint of the etching process of the process substrate based on deviations of the labeled data over time.