Ion implantation apparatus and semiconductor device manufacturing method using the same

An ion implantation apparatus comprising:

• a process chamber into which a substrate is loaded, wherein an ion implantation process of irradiating ions in a first direction toward an upper surface of the substrate is performed in the process chamber,
• wherein the process chamber comprises:
• a first inner sidewall extending in the first direction and a second direction,
• a second inner sidewall extending in the first direction and the second direction and facing the first inner sidewall,
• a third inner sidewall extending in the first direction and a third direction and,
• a fourth inner sidewall extending in the first direction and the third direction and facing the third inner sidewall;
• an ion generation chamber adjacent to the process chamber in the first direction, and configured to generate the ions and supply the ions to the process chamber in the first direction;
• a plasma flood gun (PFG) spaced apart from the third inner sidewall of the process chamber in the second direction, and configured to generate electrons and supply the electrons to the process chamber in the second direction;
• a PFG cage between the third inner sidewall of the process chamber and the PFG, and through which the electrons migrate to the process chamber;
• and
• a pair of liner films covering at least a portion of at least one of the first inner sidewall, the second inner sidewall, and the third inner sidewall of the process chamber,
• wherein the pair of liner films are spaced apart from each other in the third direction and face each other in the third direction, and
• wherein a surface of the pair of liner films has at least one of a hatched pattern, a checkered pattern, and a dot pattern.

A method for manufacturing a semiconductor device, the method comprising:

• loading a substrate into an ion implantation apparatus;
• and
• performing an ion implantation process on the substrate,
• wherein the ion implantation apparatus comprises:
• a process chamber into which a substrate is loaded, and in which the ion implantation process is performed on the substrate;
• an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber in the first direction;
• a plasma flood gun (PFG) adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber in the second direction;
• a PFG cage between the PFG and the process chamber and through which the electrons migrate to the process chamber;
• and
• a liner film covering at least a portion of an inner sidewall of the process chamber,
• wherein the liner film comprises a conductive material,
• wherein the first direction and the second direction is perpendicular to each other.