Conoscopic wafer orientation for ion implantation

Abstract

An ion implanter may include an ion source to generate an ion beam. The ion implanter may include a set of beamline components to direct the ion beam to a substrate along a beam axis, as well as a process chamber to house the substrate to receive the ion beam. The ion implanter may include a conoscopy system, comprising: an illumination source to direct light to a substrate position; a first polarizer, having a first polarization axis, disposed between the illumination source and the substrate position; a second polarizer, the second polarizer being disposed to receive the light after passing through the substrate position. The conoscopy system may include a lens, to receive the light after passing through the substrate position, and a detector, to detect the light after passing through the lens.

Dependencies are inferred from the claim text.