Non-volatile memory device and a method of operating the same

A method of operating a memory device, the method comprising:

• applying a program inhibition voltage to an unselected bit line in each of a plurality of program loops;
• applying a program permission voltage to a selected bit line in each of the plurality of program loops;
• applying a pass voltage to an unselected word line in each of the plurality of program loops;
• applying a program voltage to a selected word line in each of the plurality of program loops;
• and
• applying a pulse voltage having a polarity opposite to a polarity of the program voltage to the selected word line after applying the program voltage to the selected word line in a first program loop of the plurality of program loops.

A memory device comprising:

• a memory cell array connected to a plurality of word lines and a plurality of bit lines;
• a voltage generator configured to generate voltages to be applied to the plurality of word lines;
• and
• a control circuit configured to control a program operation for a plurality of memory cells of the memory cell array, wherein, during the program operation, the control circuit controls the voltage generator to generate a pass voltage to be applied to an unselected word line, and a program voltage and a pulse voltage having a polarity opposite to a polarity of the program voltage to be sequentially applied to a selected word line.