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US 2025/0095750 A1Published application
Methods, systems, and apparatuses for reading non-volatile memories
AssigneeSTMicroelectronics International N.V.
InventorsAbhishek JAIN, Aditya VASISTH
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Abstract
Various examples in accordance with the present disclosure provide example methods, systems, and apparatuses for reading non-volatile memories.
Claims20
A method for reading a memory cell, the method comprising:
- receiving a cell current of a memory cell;
- receiving a first reference current, a second reference current, and a third reference current;
- generating a first comparison output signal based on comparing the cell current to the first reference current;
- generating a second comparison output signal based on a comparing the cell current to the second reference current;
- generating a third comparison output signal based on comparing the cell current to the third reference current;
- and
- determining a granular state of the memory cell based at least in part on one or more of the comparison of the cell current to the first reference current, the comparison of the cell current to the second reference current, or comparison of the cell current to the third reference current.
4 more elements
A robust read circuitry for reading a memory cell, the robust read circuitry comprising:
- a sense amplifier comprising:
- one or more current generators configured to generate a plurality of reference currents;
- a comparator coupled to the one or more current generators, wherein the comparator is configured to:
- receive a cell current of a memory cell;
- receive the plurality of reference currents;
- and
- determine a granular state of the memory cell based on comparing the cell current to at least two of the plurality of reference currents.
4 more elements
Dependencies are inferred from the claim text.