Block selection circuit controlling series connected pass transistors and flash memory including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Hong KWON, Gyosoo CHOO, Myung Uk PARK, Donggeun LEE
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Hong KWON, Gyosoo CHOO, Myung Uk PARK, Donggeun LEE
Estimating the term…
A flash memory includes a memory block connected to word lines, an address decoder that selects one or more of the word lines, a first pass transistor connected to the address decoder, a second pass transistor connected in series with the first pass transistor and connected to one word line among the word lines, a first driver circuit that controls a gate voltage of the first pass transistor based on a first enable signal, and a second driver circuit that controls a gate voltage of the second pass transistor based on a second enable signal. Based on the memory block being an unselected memory block during an erase operation, the first driver circuit controls the first pass transistor to be in a floating state, the second driver circuit controls a power voltage to be provided to a gate of the second pass transistor.
A flash memory comprising:
A flash memory comprising:
A block selection circuit of a flash memory, the block selection circuit comprising:
Dependencies are inferred from the claim text.