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US 2025/0095737 A1Published application
Memory device
AssigneeKioxia Corporation
InventorsKouji Matsuo, Hiroshi Nakamura
Life of this patent
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Abstract
According to one embodiment, a memory device includes: a first semiconductor and a first insulator provided at a first position in a first direction intersecting a substrate; a first conductor extending in the first direction and having a first portion facing the first semiconductor without interposing the first insulator and a second portion facing the first insulator without interposing the first semiconductor; and a first charge storage film provided between the first portion and the first semiconductor and not provided between the second portion and the first insulator.
Claims12
A memory device comprising:
- a first semiconductor and a first insulator provided at a first position in a first direction intersecting a substrate;
- a first conductor extending in the first direction and having a first portion facing the first semiconductor without interposing the first insulator and a second portion facing the first insulator without interposing the first semiconductor;
- and
- a first charge storage film provided between the first portion and the first semiconductor and not provided between the second portion and the first insulator.
1 more element
Dependencies are inferred from the claim text.