Memory cell array circuit and method of forming the same

A method of operating a memory circuit, the method comprising:

• generating, by a first memory cell array, a first current in response to a first voltage, the first current including a first set of leakage currents and a first write current, the first set of leakage currents corresponding to a leakage current of each corresponding cell in a first column of memory cells of the first memory cell array;
• selecting, by a second word line voltage, a first tracking cell in a first column of tracking cells of a tracking circuit;
• generating a second set of leakage currents by the tracking circuit, the second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells;
• and
• mirroring, by a first current mirror, the first current in a first path with a second current in a second path, the second current including the second set of leakage currents and a second write current, the first write current corresponding to the second write current, and the first set of leakage currents corresponding to the second set of leakage currents.