Magnetic memory device

Abstract

According to one embodiment, a magnetic memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction, a memory cell provided between the first wiring line and the second wiring line, including a bottom surface connected to the first wiring line and a top surface connected to the second wiring line, and including a magnetoresistance effect element and a switching element stacked in a third direction, and a contact including a top surface connected to the second wiring line, the top surface of the contact being located higher than the top surface of the memory cell.

Dependencies are inferred from the claim text.