Methods for performing voltage sweep operations

A method, comprising:

• storing, as part of a first iteration of a voltage sweep operation and in a first buffer, a logic state read from a first memory cell based at least in part on applying a first voltage to the first memory cell, the logic state of the first memory cell being one of a first logic state or a second logic state;
• storing, as part of a second iteration of the voltage sweep operation and in a second buffer, the logic state read from the first memory cell based at least in part on a second voltage to the first memory cell, the second voltage being different from the first voltage;
• storing, in a first memory array, a first value representing a quantity of transitions of the first memory cell from the second logic state to the first logic state;
• and
• storing, in a second memory array, a second value representing a quantity of transitions of the first memory cell from the first logic state to the second logic state.

An apparatus, comprising:

• a memory device comprising at least a first memory cell;
• a buffer comprising a plurality of elements;
• and
• a controller coupled with the memory device and the buffer, wherein the controller is operable to cause the apparatus to:
• initialize a voltage sweep operation for a portion of the memory device;
• apply, as part of a first iteration of a series of iterations of the voltage sweep operation, a first voltage to the first memory cell of the portion of the memory device;
• store, in a first element of the buffer, a first value indicating that a logic state of the first memory cell transitioned from a first logic state to a second logic state based at least in part on applying the first voltage to the first memory cell;
• and
• store, in an element of a memory array, a second value indicating a difference between a first quantity of first values in the first element of the buffer at the first iteration and a second quantity of first values in a second element of the buffer.