Memory, operation method thereof, memory system and electronic apparatus

A operation method of a memory, the memory comprising a peripheral circuit that comprises a first register circuit configured to store a plurality of initial refresh rates in one-to-one correspondence to a plurality of initial temperature sections, the operation method comprising:

• sensing a temperature of the memory and generating a temperature signal based on the sensed temperature;
• determining a target configuration refresh rate based on the temperature signal and a configuration mapping table, wherein the configuration mapping table comprises a plurality of configuration temperature sections and a plurality of configuration refresh rates that are in one-to-one correspondence;
• and
• adjusting a target initial refresh rate of the plurality of initial refresh rates to the target configuration refresh rate.

A memory system, comprising:

• one or more memories, each memory of the memories comprising a peripheral circuit, the peripheral circuit comprising:
• a first register circuit configured to store a plurality of initial refresh rates that are in one-to-one correspondence to a plurality of initial temperature sections;
• a temperature sensing circuit configured to sense a temperature of the memory and generate a temperature signal based on the sensed temperature;
• and
• a control logic circuit configured to determine a target configuration refresh rate based on the temperature signal and a configuration mapping table and adjust a target initial refresh rate of the plurality of initial refresh rates to the target configuration refresh rate, wherein the configuration mapping table comprises a plurality of configuration temperature sections and a plurality of configuration refresh rates that are in one-to-one correspondence;
• and
• a memory controller coupled to the one or more memories and configured to control the one or more memories.