Apparatus and method for assessing photoresist rinse solution

A method for simulating a lithography process that is performed by a computing device, the method comprising:

• receiving a mask layout and a lithography model;
• simulating a photoresist pattern on a wafer based on the mask layout and the lithography model;
• simulating a deionized water washing process on the photoresist pattern;
• simulating a rinse process on the photoresist pattern;
• and
• acquiring surface structure data on one area of the wafer based on the photoresist pattern on which the rinse process is simulated and the lithography model, wherein simulating the rinse process includes:
• forming a cell that includes photoresist molecules based on the photoresist pattern, placing surfactant molecules, additive molecules, and solvent molecules in the cell, and performing a molecule dynamics simulation of the cell;
• and
• simulating a change in the photoresist pattern based on a number of first surfactant molecules located on an interface between a photoresist pattern based on the photoresist molecules and a solvent based on the solvent molecules, and a number of second surfactant molecules located on a surface of the solvent.