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US 2025/0093781 A1Published application
Rework of metal-containing photoresist
AssigneeLam Research Corporation
InventorsDaniel PETER, Meng XUE, Da LI, Jengyi YU, Samantha SiamHwa TAN, Wook CHOI
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Abstract
Photoresist rework of metal-containing photoresist is disclosed. Rework can be accomplished using a thermal process by exposing a substrate to an elevated temperature and an etch gas. Rework can be also accomplished using a wet process by exposing the substrate to an inorganic acidic solution. Residue or other contaminants may be cleaned up from the substrate after rework by exposure to high temperatures, plasma, or wet clean.
Claims22
A method of removing metal-containing resist, the method comprising:
- providing in a process chamber a metal-containing resist on an underlayer of a semiconductor substrate;
- and
- exposing the metal-containing resist to an etch gas comprising a halide at a first elevated temperature to remove the metal-containing resist.
A method of removing metal-containing resist, the method comprising:
- providing in a process chamber a metal-containing resist on an underlayer of a semiconductor substrate;
- and
- exposing the metal-containing resist to at least an aqueous solution of a dilute acid to remove the metal-containing resist.
Dependencies are inferred from the claim text.