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US 2025/0093779 A1Published application
Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG
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Abstract
A method of manufacturing a semiconductor device includes forming a first layer including an organic material over a substrate. A second layer including a reaction product of a silicon-containing material and a photoacid generator is formed over the first layer. A photosensitive layer is formed over the second layer, and the second layer is patterned.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first layer comprising an organic material over a substrate;
- forming a second layer comprising a reaction product of a siloxane and a photoacid generator over the first layer,
- forming a photosensitive layer over the second layer;
- and
- patterning the photosensitive layer, and
- wherein the reaction product of the siloxane and the photoacid generator comprises a cation having the following structure
- where R3 includes I.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a bottom anti-reflective coating layer over a substrate;
- forming a middle layer comprising a polysiloxane with pendant photoacid generator groups over the bottom anti-reflective coating layer,
- wherein the photoacid generator groups are bonded to a silicon in the polysiloxane through an oxygen;
- forming a photosensitive layer over the middle layer;
- selectively exposing the photosensitive layer to actinic radiation to form a latent pattern;
- and
- developing the selectively exposed photosensitive layer to form a pattern in the photosensitive layer,
- wherein a monomer of the polysiloxane with the pendant photoacid generator groups include a cation having the following structure
- where R3 includes I.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a bottom layer of a trilayer resist over a substrate;
- forming a middle layer of a trilayer resist over the bottom layer,
- wherein the middle layer comprises a polysiloxane with pendant photoacid generator groups,
- wherein the photoacid generator groups are bonded to a silicon in the polysiloxane through an oxygen;
- forming a photosensitive layer over the middle layer;
- wherein a monomer of the polysiloxane with the pendant photoacid generator groups includes a cation having the following structure
- where R3 includes I.
4 more elements
Dependencies are inferred from the claim text.