Method for inspecting pattern defects
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJu-Ying CHEN, Che-Yen LEE, Chia-Fong CHANG, Hua-Tai LIN, Te-Chih HUANG, Chi-Yuan SUN, Jiann Yuan HUANG
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJu-Ying CHEN, Che-Yen LEE, Chia-Fong CHANG, Hua-Tai LIN, Te-Chih HUANG, Chi-Yuan SUN, Jiann Yuan HUANG
Estimating the term…
In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
A method for inspecting pattern defects, the method comprising:
A method for inspecting pattern defects, the method comprising:
A test device for detecting a defect, comprising:
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