System and method for implementing temperature compensation in a memory device

A method of operating a plurality of memory cells, comprising:

• programming respective ones of the plurality of memory cells while at a first temperature to one of a plurality of different program states, wherein respective ones of the different program states are associated with a corresponding first read current value that is confirmed by performing a first read operation using nominal read conditions;
• determining modified read conditions using a second read operation for at least one of the memory cells while at a second temperature different than the first temperature, such that a second read current for the one memory cell using the modified read conditions in the second read operation is approximately equal to the first read current value for the one memory cell using the nominal read conditions in the first read operation;
• performing a third read operation on respective ones of the memory cells while at the second temperature using the modified read conditions to determine respective third read current values for the memory cells;
• determining error read current values for respective ones of the memory cells, which are the respective differences between the first read current values and the third read current values;
• and
• for respective ones of a plurality of desired program states, assigning an upper program state and a lower program state to the desired program state, wherein a read current value for the assigned upper program state and a read current value for the assigned lower program state:
• correspond approximately to one of the determined error read current values, and
• are separated approximately by a target read current value associated with the desired program state.