Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

Abstract

The present invention is a compound for forming a metal-containing film, being a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and being a monomolecular compound containing two or more Sn atoms per molecule. This can provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Dependencies are inferred from the claim text.