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US 2025/0085635 A1Published application
Developable resist overlayer composition as well as method for manufacturing resist overlayer pattern and resist pattern
AssigneeMerck Patent GmbH
InventorsHiroshi Yanagita, Kazuma Yamamoto
Life of this patent
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Abstract
A developable resist overlayer composition as well as a method for manufacturing a resist overlayer pattern and a resist pattern are provided.
Claims18
A developable resist overlayer composition comprising a hydrocarbon compound (A) and a solvent (B),
- wherein,
- the hydrocarbon compound (A) is a compound represented by the formula (0) or a polymer comprising a structure derived from the compound represented by the formula (0) as a repeating unit;
- and
- the solvent (B) comprises a solvent (B1) represented by the formula (b1):
- wherein
- X is a C1-60 hydrocarbon group;
- n01 is a number of 1 to 10, n02 is a number of 0 to 10;
- Y is a group represented by the formula (1) or —OH, provided that 40 to 100% of the total number of Y is a group represented by the formula (1);
- R02 is C1-6 alkoxy (excluding t-butoxy), —(C═O)—R03, —(C═O)—O—
- R04, —(C═O)—N(R05)2, —O—(C═O)—R06 or —NR07—(C═O)—R08;
- R05 is H or C1-4 alkyl;
- R04 is C1-4 alkyl (excluding t-butyl);
- R06 is each independently H or C1-4 alkyl, and two R05 can be bonded each other to form a ring structure;
- R06 is H, C1-4 alkyl or C1-4 alkoxy (excluding t-butoxy);
- R07 is H or C1-4 alkyl;
- R08 is H, C1-4 alkyl or —N(R09)2;
- R07 and R08 can be bonded each other to form a ring structure when they are alkyl;
- and
- R09 is each independently H or C1-4 alkyl, and two R09 can be bonded each other to form a ring structure,
- wherein
- n11, n12, n13 and n14 are each independently a number of 0 to 1;
- L12 is selected from the group consisting of —C(═O)—, —CH2—C(═O)—, —C(═O)—CH2— and —CH(CH3)—;
- L14 is C1-5 alkylene;
- R15 is C1-15 alkyl or C2-7 alkenyl;
- and
- the methyl of L12 and the methyl of R15 may be bonded each other to form a ring structure, and
- R21—O—R22 (b1)
- wherein
- R21 and R22 are each independently C1-8 alkyl.
26 more elements
A method for manufacturing a resist overlayer pattern and a resist pattern comprising:
- (1) applying a resist composition above a substrate and heating the resist composition to form a resist film;
- (2) optionally exposing the resist film;
- (3) applying a developable resist overlayer composition directly on the resist film and heating the resist overlayer composition to form a resist overlayer;
- (4) optionally exposing the resist film and the resist overlayer, provided that at least one of the exposures of (2) and (4) is performed;
- (5) transferring the acid in the resist film to the resist overlayer;
- and
- (6) developing the resist overlayer and the resist film using a developer to form a resist overlayer pattern and a resist pattern, wherein the step (2) is optionally followed by a step (2-2) of heating the step (4) is optionally followed by a step (4-2) of heating.
4 more elements
Dependencies are inferred from the claim text.