Pattern forming method and method for manufacturing electronic device

A pattern forming method comprising:

• a step 1 of forming a metal resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a metal compound having at least one bond selected from the group consisting of a metal-carbon bond and a metal-oxygen bond;
• a step 2 of exposing the metal resist film;
• and
• a step 3 of obtaining a pattern by subjecting the exposed metal resist film to a development treatment with a developer including an organic solvent to remove a non-exposed portion,
• wherein the pattern forming method may further comprise, after the step 3, a step 4 of washing the pattern with a rinsing liquid including an organic solvent,
• in a case where the pattern forming method does not comprise the step 4 after the step 3, the developer is a chemical liquid including two or more kinds of organic solvents,
• in a case where the pattern forming method comprises the step 4 after the step 3, at least one of the developer or the rinsing liquid is a chemical liquid including two or more kinds of organic solvents, and
• the chemical liquid including two or more kinds of organic solvents includes at least an organic solvent in which a sum of a polar term δP and a hydrogen-bonding term δH in Hansen solubility parameters is less than 9.8 (J/cm3)0.5.