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US 2025/0085270 A1Published application
Nanopore sequencing device comprising ruthenium-containing electrodes
AssigneeRoche Sequencing Solutions, Inc.
InventorsWing Kei Au, Jason Komadina, Marowen Ng
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Abstract
Disclosed herein are ruthenium-containing materials, such as ruthenium containing materials having a double layer capacitance ranging from between about 180 pF/um2 to about 320 pF/um2. In some embodiments, the ruthenium-containing materials are suitable for use in electrodes. In some embodiments, the ruthenium-containing materials are suitable for use in nanopore sequencing devices.
Claims21
A ruthenium-containing film prepared according to the process:
- performing one of a sputter deposition or a plasma vapor deposition using a ruthenium target, wherein the sputter deposition or the plasma vapor deposition process comprises (i) introducing nitrogen into the deposition chamber at a flow rate of between 10 sccm and 100 sccm, and (ii) introducing argon into the deposition chamber at a flow rate of 10 sccm, and wherein a deposition pressure within the deposition chamber is maintained at between 5 mTorr to 25 mTorr during the deposition, and wherein the deposition is performed using a power ranging from 50 watts to 250 watts.
A method of preparing an electrode comprising:
- etching a hole within a first dielectric layer disposed onto a conductive layer, wherein the hole comprises an exposed surface of a conductive layer;
- depositing a working electrode comprising a ruthenium-containing film at least onto the exposed surface of the conductive layer within the hole;
- and
- depositing a cap layer onto the surface of the working electrode.
1 more element
Dependencies are inferred from the claim text.