Examining method for a coating layer on a wafer

Abstract

An examining method for a coating layer on a wafer is provided, including providing an incident light to the coating layer and generating a reflecting light after the coating layer receives the incident light. A spectral analysis of the reflecting light is then generated and compared with a first reference waveform to determine a material of the coating layer. Moreover, the spectral analysis may be further compared with a second reference waveform to determine a thickness of the coating layer. The incident light and reflecting light are provided and received by a spectroscope which is placed above on the wafer to provide perpendicular optical paths to the coating layer on the upper surface of the wafer. By employing the disclosed method, the material and thickness of the coating layer on the wafer can be examined and further classified so as to enhance the conventional efficiency in the prior arts.

Dependencies are inferred from the claim text.