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US 2025/0084561 A1Published application
Method of manufacturing silicon carbide wafer and method of manufacturing silicon carbide ingot
AssigneeSenic Inc.
InventorsKap Ryeol KU, Myung Ok KYUN, Jung Gyu KIM, Jung Woo CHOI, Jung Doo SEO, Jong Hwi PARK
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Abstract
Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.
Claims16
A method of manufacturing a silicon carbide wafer, the method comprising:
- disposing a silicon carbide block in a crucible;
- sublimating a silicon carbide comprised in the silicon carbide block to form a silicon carbide ingot;
- and
- processing the silicon carbide ingot.
1 more element
A method of manufacturing a silicon carbide ingot, the method comprising:
- disposing a silicon carbide block in a crucible;
- disposing a seed crystal in the crucible;
- and
- sublimating silicon carbide comprised in the silicon carbide block to grow the seed crystal.
1 more element
Dependencies are inferred from the claim text.