Film-forming method and film-forming apparatus

A film-forming apparatus configured to form a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate, the film-forming apparatus comprising:

• a process chamber configured to house the substrate;
• a gas supply configured to supply gas into the process chamber;
• and
• a controller, wherein
• the controller includes
• a processor, and
• a memory storing one or more programs, which when executed, cause the process to
• supply a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom, and
• supply a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.