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US 2025/0084351 A1Published application
Processing solution, method for processing substrate, and method for manufacturing semiconductor substrate
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsJun IIOKA, Aaron GELL
Life of this patent
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Abstract
There are provided a processing solution, including: an oxidizing agent (A), and hexafluorosilicic acid (B), in which a molar ratio of the content of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.
Claims13
A processing solution, comprising:
- an oxidizing agent (A), and
- hexafluorosilicic acid (B),
- wherein a molar ratio of a Si atom of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900.
Dependencies are inferred from the claim text.