Semiconductor processing solution
AssigneeTokuyama Corporation
InventorsYuzan SUZUKI, Yuki KIKKAWA, Tomoaki SATO
Life of this patent
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Abstract
Provided is a treatment liquid for a semiconductor to be used for removing a transition metal-containing substance on a substrate, the treatment liquid for a semiconductor containing a specific halogen oxyacid ion, at least one ion selected from the group consisting of a bromide ion, a bromite ion, a bromate ion, a chloride ion, a chlorate ion, an iodate ion, an iodide ion, and a triiodide ion, and at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al, wherein a concentration of any one metal of Ca, Na, K, Cr, Ni, or Al is 0.1 ppt or more and 200 ppt or less.
Claims17
A treatment liquid for a semiconductor to be used for removing a transition metal-containing substance on a substrate, the treatment liquid for a semiconductor comprising:
- at least one halogen oxyacid ion selected from the group consisting of a hypobromite ion, a hypochlorite ion, and a periodate ion;
- at least one ion selected from the group consisting of a bromide ion, a bromite ion, a bromate ion, a chloride ion, a chlorate ion, an iodate ion, an iodide ion, and a triiodide ion;
- and
- at least one metal selected from the group consisting of Ca, Na, K, Cr, Ni, and Al, wherein a concentration of any one metal of Ca, Na, K, Cr, Ni, or Al is 0.1 mass ppt or more and 200 mass ppt or less.
Dependencies are inferred from the claim text.