Molybdenum chemical mechanical polishing compounds and methods of use thereof

Abstract

The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer. The first molybdenum static etching rate suppressor is a phosphate-containing polyethylene surfactant or a sulfate-containing polyethylene surfactant, and the second molybdenum static etching rate suppressor is a basic amino acid, and this combination provides advantageous properties such as high molybdenum removal rate while also exhibiting a low molybdenum static etching rate, thus providing compositions well suited for polishing a molybdenum surface.

Dependencies are inferred from the claim text.